Intrinsic and doped μc-Si:H TFT layers using 13.56 MHz PECVD at 250°C

Materials Research Society Symposium Proceedings

Volumn 808, Issue , 2004, Pages 679-684

  Lee, Czang Ho ^a   Striakhilev, Denis ^a   Nathan, Arokia ^a  

^a UNIVERSITY OF WATERLOO   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; BACKSCATTERING; CRYSTALLINE MATERIALS; ELECTRON MOBILITY; HYDROGENATION; PHOTOSENSITIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAMAN SCATTERING; SEMICONDUCTOR DOPING; THERMAL EFFECTS; THRESHOLD VOLTAGE; VOLUME FRACTION;

CONTACT LAYERS; CRYSTALLINITY; HYDROGEN DILUTION; MICROCRYSTALLINE SILICON;

THIN FILM TRANSISTORS;

EID: 12844265495     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-808-a4.14     Document Type: Conference Paper

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