Thermoplastic deformation and residual stress topography of 4H-SiC wafers

Materials Research Society Symposium Proceedings

Volumn 815, Issue , 2004, Pages 133-138

  Okojie, Robert S ^a   Zhang, Ming ^b  

^a NASA GLENN RESEARCH CENTER   (United States)

^b Case Western Reserve University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEFORMATION; EPITAXIAL GROWTH; RESIDUAL STRESSES; SEMICONDUCTOR MATERIALS; SILICON WAFERS; SINGLE CRYSTALS; STACKING FAULTS; THERMAL CONDUCTIVITY; THERMOPLASTICS; TRANSMISSION ELECTRON MICROSCOPY;

BASAL PLANE DISLOCATIONS; PARTIAL DISLOCATION; PLANE DISLOCATION; THEMOPLASTIC DEFORMATION;

SILICON CARBIDE;

EID: 12844263633     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-815-j6.2     Document Type: Conference Paper

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