Energy transfer rate between erbium 4f shell and Si host

Materials Science Forum

Volumn 258-263, Issue 9993, 1997, Pages 1491-1496

  Taguchi, A ^a   Takahei, K ^a   Matsuoka, M ^b   Tohno, S ^b  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

^b NTT CORPORATION   (Japan)

Author keywords

Energy transfer rate; Er; Luminescence decay time; Si; Time response

Indexed keywords

ELECTRON ENERGY LEVELS; ENERGY TRANSFER; ERBIUM; LUMINESCENCE OF INORGANIC SOLIDS; SEMICONDUCTOR DOPING; THERMAL EFFECTS;

NONRADIATIVE MULTIPHONON PROCESS;

SEMICONDUCTING SILICON;

EID: 12844258353     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.258-263.1491     Document Type: Article

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