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Volumn 422, Issue , 1996, Pages 3-14
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Ion beam epitaxy of in-situ Er-O co-doped silicon films
a
a
NTT CORPORATION
(Japan)
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Author keywords
[No Author keywords available]
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Indexed keywords
IN SITU PROCESSING;
ION IMPLANTATION;
OXIDATION;
PHOTOLUMINESCENCE;
RARE EARTH ELEMENTS;
SEMICONDUCTING FILMS;
SEMICONDUCTING SILICON;
SEMICONDUCTOR DOPING;
SILICON;
SPUTTER DEPOSITION;
VAPOR PHASE EPITAXY;
CO-DOPING;
ERBIUM DOPED SILICON;
ION BEAM EPITAXY;
ERBIUM;
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EID: 0030422372
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1557/proc-422-3 Document Type: Conference Paper |
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Times cited : (2)
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References (15)
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