Devices fabrication with narrow-bandgap a-SiGe:H alloys deposited by HWCVD

Materials Research Society Symposium Proceedings

Volumn 808, Issue , 2004, Pages 617-622

  Xu, Yueqin ^a   Yan, Baojie ^b   Nelson, Brent P ^a   Iwaniczko, Eugene ^a   Reedy, Robert C ^a   Mahan, A H ^a   Branz, Howard ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^b UNITED SOLAR OVONIC LLC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; FOURIER TRANSFORM INFRARED SPECTROSCOPY; PHOTONS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; QUANTUM EFFICIENCY; SECONDARY ION MASS SPECTROMETRY; SILICON COMPOUNDS; SOLAR CELLS;

BANDGAP GRADING; BANDGAP MATERIALS; BANDGAP PROFILING; HOT-WIRE CHEMICAL VAPOR DEPOSITION (HWCVD);

AMORPHOUS ALLOYS;

EID: 12744267765     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-808-a9.51     Document Type: Conference Paper

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