Passivation of InP/InGaAs double heterojunction bipolar transistors in relation to current gain degradation

Journal of the Korean Physical Society

Volumn 45, Issue SUPPL., 2004, Pages

  Min, Byoung Gue ^a   Lee, Kyung Ho ^a   Lee, Jong Min ^a   Kim, Seong Il ^a   Ju, Chul Won ^a  

^a Korea Basic Science Institute (KBSI)   (South Korea)

Author keywords

Current gain; HBT; InP InGaAs InP; Passivation; Recombination; Surface

Indexed keywords

EID: 12744265208     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

References (7)

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