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Journal of the Korean Physical Society

Volumn 42, Issue SUPPL., 2003, Pages

Characterization of PZT capacitors with Ir electrodes prepared solely by low-temperature MOCVD

(5) Shimizu, M a Okaniwa, M a Kita, K a Fujisawa, H a Niu, H a

a UNIVERSITY OF HYOGO (Japan)

Author keywords

Ferroelectric properties; Ir thin film; MOCVD; Planarcapacitor; PZT thin film; Three dimensional capacitor

Indexed keywords

EID: 12744264953 PISSN: 03744884 EISSN: None Source Type: Journal
DOI: None Document Type: Conference Paper

Times cited : (6)

References (15)

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