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Volumn 19, Issue 1, 2005, Pages 95-100
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Semiconductor crystal growth by modified vertical gradient freezing with electromagnetic stirring
c
Campus Box 7910
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(United States)
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Author keywords
[No Author keywords available]
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Indexed keywords
CRYSTAL GROWTH;
DOPING (ADDITIVES);
ELECTROMAGNETISM;
FREEZING;
MATHEMATICAL MODELS;
NUMERICAL ANALYSIS;
STOICHIOMETRY;
DOPANT;
ELECTROMAGNETIC STIRRING;
GALIUM-ANTIMONIDE (GASB);
VERTICAL GRADIENT FREEZE (VGF);
SEMICONDUCTING GALLIUM;
CRYSTAL;
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EID: 12744261546
PISSN: 08878722
EISSN: 15336808
Source Type: Journal
DOI: 10.2514/1.10279 Document Type: Article |
Times cited : (10)
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References (8)
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