Vertical gradient freezing of doped gallium-antimonide semiconductor crystals using submerged heater growth and electromagnetic stirring

Journal of Crystal Growth

Volumn 259, Issue 1-2, 2003, Pages 26-35

  Ma, Nancy ^a   Bliss, David F ^b   Iseler, Gerald W ^b  

^a North Carolina State University   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

A1. Fluid flows; A1. Magnetic fields; A1. Mass transfer; A1. Segregation; A2. Gradient freeze technique; A2. Growth from melt; B1. Antimonides; B2. Semiconducting III V materials

Indexed keywords

COMPOSITION; CRYSTALLINE MATERIALS; FREEZING; GALLIUM COMPOUNDS; MAGNETIC FIELDS; MASS TRANSFER; MATHEMATICAL MODELS; SEMICONDUCTOR DOPING;

ELECTROMAGNETIC STIRRING;

SEMICONDUCTOR MATERIALS;

EID: 0141998808     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(03)01575-6     Document Type: Article

References (4)

1. Morton J.L., Ma N., Bliss D.F., Bryant G.G. J. Crystal Growth. 242:2002;471.
2. Ohmori Y., Sugii K., Akai S., Matsumoto K. J. Crystal Growth. 60:1982;79.
3. Ostrogorsky A.G., Müller G. J. Crystal Growth. 137:1994;64.
4. Grants I., Gerbeth G. J. Fluid Mech. 463:2002;229.