SCOPUS 정보 검색 플랫폼

Materials Research Society Symposium Proceedings

Volumn 808, Issue , 2004, Pages 623-628

Characterization of the bulk recombination in hydrogenated amorphous silicon solar cells

(5) Deng, J a Pearce, J M a Vlahos, V a Collins, R W a Wronski, C R a

a PENNSYLVANIA STATE UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; BAND STRUCTURE; CURRENT VOLTAGE CHARACTERISTICS; DEFECTS; DIFFUSION; FERMI LEVEL; HYDROGENATION; PHOTOCONDUCTIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLYCRYSTALLINE MATERIALS; SEMICONDUCTOR DIODES; THIN FILMS;

CARRIER RECOMBINATION; CURRENT TRANSPORT; DEFECT STATES; STAEBLER-WRONSKI EFFECT (SWE);

SILICON SOLAR CELLS;

EID: 12744259333 PISSN: 02729172 EISSN: None Source Type: Conference Proceeding
DOI: 10.1557/proc-808-a8.8 Document Type: Conference Paper

Times cited : (11)

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