Dependence of optically oriented and detected electron spin resonance on donor concentration in n-GaAs

Solid State Communications

Volumn 132, Issue 9, 2004, Pages 613-616

  Colton, J S ^a,b   Kennedy, T A ^a   Bracker, A S ^a   Miller, J B ^a   Gammon, D ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

^b UNIVERSITY OF WISCONSIN LA CROSSE   (United States)

Author keywords

A. Donors; A. GaAs; E. Optical; E. Spin resonance

Indexed keywords

LIGHT POLARIZATION; METAL INSULATOR TRANSITION; PARAMAGNETIC RESONANCE; PROBLEM SOLVING; SAMPLING; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM DOTS;

DONORS; OPTICAL ORIENTATION; QUANTUM COMPUTING (QC); SPIN RESONANCE;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 12444313030     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2004.08.039     Document Type: Article

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