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Volumn 56, Issue 12, 1997, Pages 7422-7427

High-field spin resonance of weakly bound electrons in GaAs

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EID: 0000211691     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.56.7422     Document Type: Article
Times cited : (46)

References (21)
  • 14
    • 36149023996 scopus 로고
    • The effective (Formula presented) factor in a semiconductor is determined by spin-orbit coupling and therefore may vary depending upon the energy of a given electronic state; see L. M. Roth, B. Lax, and S. Zwerdling, Phys. Rev. 114, 90 (1959). A change of (Formula presented) in the energy position of a donor state, easily caused by potential fluctuations, results in a (Formula presented) shift of the ESR line at (Formula presented).
    • (1959) Phys. Rev. , vol.114 , pp. 90
    • Roth, L.1    Lax, B.2    Zwerdling, S.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.