The effect of the traveling magnetic field (TMF) on the buoyancy-induced convection in the vertical Bridgman growth of semiconductors

Journal of Crystal Growth

Volumn 263, Issue 1-4, 2004, Pages 80-89

  Yesilyurt, S ^a   Motakef, S ^b   Grugel, R ^c   Mazuruk, K ^c  

^a SABANCI UNIVERSITY   (Turkey)

^b Cape Simulations   (United States)

^c NASA MARSHALL SPACE FLIGHT CENTER   (United States)

Author keywords

A1. Material processing; A1. Traveling magnetic field; A2. Microgravity; A2. Vertical Bridgman technique

Indexed keywords

BUOYANCY; COMPUTATIONAL METHODS; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTROMAGNETIC FIELD EFFECTS; HEAT CONVECTION; INTERFACES (MATERIALS); MATERIALS SCIENCE; MICROGRAVITY PROCESSING; SEMICONDUCTOR GROWTH; THERMOELECTRICITY;

MATERIAL PROCESSING; TRAVELING MAGNETIC FIELDS (TMF); VERTICAL BRIDGMAN TECHNIQUE;

CRYSTAL GROWTH FROM MELT;

EID: 1242308882     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2003.11.066     Document Type: Article

References (9)

1. Dold P., Benz K.W. Prog. Cryst. Growth Char. Mater. 38:1999;7.
2. K. Mazuruk, N. Ramachandran, M.P. Volz, Proceedings of the 37th AIAA Aerospace Sciences Meeting Reno, Nevada AIAA 99-0941 ,1999.
3. R. Grugel, K. Mazuruk, Procedinngs of the 39th AIAA Aerospace Sciences Meeting Reno, Nevada, AIAA 01-0462, 2001.
4. Croll A., Szofran F.R., Dold P., Benz K.W., Lehoczky S.L. J. Crystal Growth. 183:1998;554.
5. Yesilyurt S., Vujisic L., Motakef S., Szofran F.R., Volz M.P. J. Crystal Growth. 207:1999;278.
6. Shercliff J.A. J. Fluid Mech. 91:1979;231.
7. Khine Y.Y., Walker J.S. J. Crystal Growth. 120:1998;150.
8. Derby J.J., Atherton L.J., Gresho P.M. J. Crystal Growth. 97:1989;792.
9. Jackson J.D. Classical Electrodynamics. 1975;Wiley, New York.