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Volumn 183, Issue 1-2, 1998, Pages 150-158

Thermoelectric magnetohydrodynamic effects during Bridgman semiconductor crystal growth with a uniform axial magnetic field

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; INTERFACES (MATERIALS); MAGNETIC FIELD EFFECTS; MAGNETOHYDRODYNAMICS; MOLTEN MATERIALS; SEMICONDUCTOR GROWTH; THERMOELECTRICITY;

EID: 0031701549     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(97)00394-1     Document Type: Article
Times cited : (64)

References (19)
  • 17
    • 12844261503 scopus 로고    scopus 로고
    • Floating-zone growth of silicon in magnetic fields. Part II: Strong static axial fields
    • in press
    • A. Cröll, F.R. Szofran, P. Dold, K.W. Benz, S.L. Lehoczky, Floating-zone growth of silicon in magnetic fields. Part II: Strong static axial fields, J. Crystal Growth (1997), in press.
    • (1997) J. Crystal Growth
    • Cröll, A.1    Szofran, F.R.2    Dold, P.3    Benz, K.W.4    Lehoczky, S.L.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.