Main characteristics of Pb0.85Sm0.1TiO3 ferroelectric thin films with Bi2Ti2O7 buffer layer

Journal of Crystal Growth

Volumn 263, Issue 1-4, 2004, Pages 385-388

  Jiang, F Y ^a,b   Liu, R C ^a  

^a YANTAI UNIVERSITY   (China)

^b SHANDONG UNIVERSITY   (China)

Author keywords

A1. X ray diffraction; A3. Polycrystalline deposition; B2. Ferroelectric materials

Indexed keywords

BISMUTH COMPOUNDS; CAPACITANCE; CRYSTAL STRUCTURE; DEPOSITION; DYNAMIC RANDOM ACCESS STORAGE; ELECTRIC POTENTIAL; INTERFACES (MATERIALS); LEAD COMPOUNDS; LIGHT POLARIZATION; POLYCRYSTALLINE MATERIALS; SOL-GELS; X RAY DIFFRACTION;

BILAYER STRUCTURES; POLYCRYSTALLINE DEPOSITION;

FERROELECTRIC THIN FILMS;

EID: 1242308837     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2003.11.096     Document Type: Article

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