Surface Wave Plasma Production Employing High-Permittivity Discharge Tube for Material Processing

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 12, 2003, Pages 7536-7540

  Fujiwara, Kazuya ^a   Okuya, Tadayoshi ^b   Yanagisawa, Michihiko ^b   Shindo, Haruo ^a  

^a TOKAI UNIVERSITY   (Japan)

^b Speedfam Co Ltd   (Japan)

Author keywords

High density plasma; Permittivity of discharge tube; Plasma for Ultra Large Scale Integration (ULSI) processes; Silicon wafer global planarization; Surface wave plasma

Indexed keywords

ALUMINA; AXIAL FLOW; CARRIER CONCENTRATION; GAS DISCHARGE TUBES; MICROWAVES; PERMITTIVITY; PLASMA ETCHING; PLASMA OSCILLATIONS; PLASMA SOURCES; SILICON WAFERS; ULSI CIRCUITS;

HIGH-DENSITY PLASMA; PERMITTIVITY OF DISCHARGE TUBE; PLASMA FOR ULTRA-LARGE-SCALE INTEGRATION (ULSI) PROCESSES; SILICON WAFER GLOBAL PLANARIZATION; SURFACE WAVE PLASMA;

SURFACE WAVES;

EID: 1242287965     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.7536     Document Type: Article

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