Effect of SeS2 treatment on the surface modification of GaAs and adhesive wafer bonding of GaAs with Silicon

Journal of Crystal Growth

Volumn 263, Issue 1-4, 2004, Pages 454-458

  Premchander, P ^a   Jayavel, R ^a   Arivuoli, D ^a   Baskar, K ^a  

^a ANNA UNIVERSITY   (India)

Author keywords

A1. Surface structure; A1. X ray diffraction; A3. Passivation; B2. Semiconducting materials; B2. Wafer bonding

Indexed keywords

ADHESIVES; BONDING; CRYSTAL GROWTH FROM MELT; MORPHOLOGY; PASSIVATION; SCANNING ELECTRON MICROSCOPY; SELENIUM COMPOUNDS; SILICON WAFERS; SURFACE STRUCTURE; SURFACE TREATMENT; THERMODYNAMIC STABILITY; X RAY DIFFRACTION ANALYSIS;

LATTICE MISMATCH; WAFER BONDING;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 1242263826     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2003.12.015     Document Type: Article

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