Surface and bulk passivation effect of GaAs grown on Si substrates by SeS2 treatment

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 12 A, 1999, Pages 6587-6590

  Arokiaraj, Jesudoss ^a   Soga, Tetsuo ^a   Jimbo, Takashi ^a   Umeno, Masayoshi ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Heterostructure; Minority carrier lifetime; Passivation; Photoluminscence; SeS2

Indexed keywords

ANNEALING; HETEROJUNCTIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PASSIVATION; PHOTOLUMINESCENCE; SEMICONDUCTING SELENIUM COMPOUNDS; SEMICONDUCTING SILICON; SUBSTRATES; SURFACE PROPERTIES; TEMPERATURE; X RAY PHOTOELECTRON SPECTROSCOPY;

MINORITY CARRIER LIFETIME; SELENIUM SULPHIDE TREATMENT; TIME RESOLVED PHOTOLUMINESCENCE MEASUREMENT;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0033344387     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.6587     Document Type: Article

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