Internal field switching in CdSe quantum dot films on Si

Journal of Physical Chemistry B

Volumn 109, Issue 1, 2005, Pages 182-187

  Sarkar, Shaibal K ^a   Cohen, Hagai ^a   Hodes, Gary ^a  

^a WEIZMANN INSTITUTE OF SCIENCE   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BATH DEPOSITION; FIELD SWITCHING; ILLUMINATION INTENSITY; QUANTUM DOT FILMS;

CADMIUM COMPOUNDS; DEPOSITION; ELECTRODES; ELECTRON TRAPS; HOLE TRAPS; SEMICONDUCTOR QUANTUM DOTS; SILICON; SWITCHING; X RAY PHOTOELECTRON SPECTROSCOPY;

THIN FILMS;

CADMIUM DERIVATIVE; CADMIUM SELENIDE; QUANTUM DOT; SELENIUM DERIVATIVE; SILICON;

ARTICLE; ARTIFICIAL MEMBRANE; CHEMISTRY; SURFACE PROPERTY; TIME;

CADMIUM COMPOUNDS; MEMBRANES, ARTIFICIAL; QUANTUM DOTS; SELENIUM COMPOUNDS; SILICON; SURFACE PROPERTIES; TIME FACTORS;

EID: 12344318453     PISSN: 15206106     EISSN: None     Source Type: Journal    
DOI: 10.1021/jp0464851     Document Type: Article

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