Electron-phonon renormalization of electronic band gaps of semiconductors: Isotopically enriched silicon

Physical Review B - Condensed Matter and Materials Physics

Volumn 70, Issue 19, 2004, Pages 1-4

  Tsoi, S ^a   Alawadhi, H ^b   Lu, X ^a   Ager III, J W ^a   Liao, C Y ^c,d   Riemann, H ^e   Haller, E E ^c,d   Rodriguez, S ^a   Ramdas, A K ^a  

^a PURDUE UNIVERSITY   (United States)

^b UNIVERSITY OF SHARJAH   (United Arab Emirates)

^c LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^d Lawrence Berkeley National Laboratory   (United States)

^e IKZ   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ISOTOPE; SILICON;

ARTICLE; CHEMICAL STRUCTURE; ELECTRON; ELECTRONICS; EXCITATION; MATHEMATICAL ANALYSIS; PHONON; PHOTOLUMINESCENCE; SEMICONDUCTOR; SPECTRUM;

EID: 12344307711     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.70.193201     Document Type: Article

References (30)

1. M. L. Cohen and J. R. Chelikowski, Electronic Structure and Optical Properties of Semiconductors (Springer-Verlag, Heidelberg, 1988).
2. See, E. E. Haller, J. Appl. Phys. 77, 2857 (1995).
3. T. R. Anthony and W. F. Banholzer, Diamond Relat. Mater. 1, 717 (1992).
4. K. Takyu, K. M. Itoh, K. Oka, N. Saito, and V. I. Ozhogin, Jpn. J. Appl. Phys., Part 2 38, L1493 (1999); A. D. Bulanov, G. G. Devyatych, A. V. Gusev, P. G. Sennikov, H.-J. Pohl, H. Riemann, H. Schilling, and P. Becker, Cryst. Res. Technol. 35, 1023 (2000); T. Ruf, R. W. Henn, M. Asen-Palmer, E. Gmelin, M. Cardona, H.-J. Pohl, G. G. Devyatych, and P. G. Sennikov, Solid State Commun. 115, 243 (2000); F. Widulle, T. Ruf, M. Konuma, I. Silier, M. Cardona, W. Kriegseis, and V. I. Ozhogin, ibid. 118, 1 (2001).
5. K. Takyu, K. M. Itoh, K. Oka, N. Saito, and V. I. Ozhogin, Jpn. J. Appl. Phys., Part 2 38, L1493 (1999); A. D. Bulanov, G. G. Devyatych, A. V. Gusev, P. G. Sennikov, H.-J. Pohl, H. Riemann, H. Schilling, and P. Becker, Cryst. Res. Technol. 35, 1023 (2000); T. Ruf, R. W. Henn, M. Asen-Palmer, E. Gmelin, M. Cardona, H.-J. Pohl, G. G. Devyatych, and P. G. Sennikov, Solid State Commun. 115, 243 (2000); F. Widulle, T. Ruf, M. Konuma, I. Silier, M. Cardona, W. Kriegseis, and V. I. Ozhogin, ibid. 118, 1 (2001).
6. K. Takyu, K. M. Itoh, K. Oka, N. Saito, and V. I. Ozhogin, Jpn. J. Appl. Phys., Part 2 38, L1493 (1999); A. D. Bulanov, G. G. Devyatych, A. V. Gusev, P. G. Sennikov, H.-J. Pohl, H. Riemann, H. Schilling, and P. Becker, Cryst. Res. Technol. 35, 1023 (2000); T. Ruf, R. W. Henn, M. Asen-Palmer, E. Gmelin, M. Cardona, H.-J. Pohl, G. G. Devyatych, and P. G. Sennikov, Solid State Commun. 115, 243 (2000); F. Widulle, T. Ruf, M. Konuma, I. Silier, M. Cardona, W. Kriegseis, and V. I. Ozhogin, ibid. 118, 1 (2001).
7. K. Takyu, K. M. Itoh, K. Oka, N. Saito, and V. I. Ozhogin, Jpn. J. Appl. Phys., Part 2 38, L1493 (1999); A. D. Bulanov, G. G. Devyatych, A. V. Gusev, P. G. Sennikov, H.-J. Pohl, H. Riemann, H. Schilling, and P. Becker, Cryst. Res. Technol. 35, 1023 (2000); T. Ruf, R. W. Henn, M. Asen-Palmer, E. Gmelin, M. Cardona, H.-J. Pohl, G. G. Devyatych, and P. G. Sennikov, Solid State Commun. 115, 243 (2000); F. Widulle, T. Ruf, M. Konuma, I. Silier, M. Cardona, W. Kriegseis, and V. I. Ozhogin, ibid. 118, 1 (2001).
8. H. Y. Fan, Rep. Prog. Phys. 19, 107 (1956).
9. C. Parks, A. K. Ramdas, S. Rodriguez, K. M. Itoh, and E. E. Haller, Phys. Rev. B 49, 14244 (1994).
10. H. Y. Fan, Phys. Rev. 82, 900 (1951).
11. E. Antončik, Czech. J. Phys., Sect. A 5, 449 (1955).
12. M. Y. Hu, H. Sinn, A. Alatas, W. Sturhahn, E. E. Alp, H.-C. Wille, Yu. V. Shvyd'ko, J. P. Sutler, J. Bandaru, E. E. Haller, V. I. Ozhogin, S. Rodriguez, R. Colella, E. Kartheuser, and M. A. Villeret, Phys. Rev. B 67, 113306 (2003).
13. R. B. Hammond, D. L. Smith, and T. C. McGill, Phys. Rev. Lett. 35, 1535 (1975).
14. R. B. Hammond, T. C. McGill, and J. W. Mayer, Phys. Rev. B 13, 3566 (1976).
15. For an excellent review, see J. P. Wolfe and C. D. Jeffries, in Electron-hole Droplets in Semiconductors, edited by C. D. Jeffries and L. V. Keldysh (North-Holland, Amsterdam, 1983), p. 431.
16. K. L. Shaklee and R. E. Nahory, Phys. Rev. Lett. 24, 942 (1970).
17. T. Nishino, M. Takeda, and Y. Hamakawa, Solid State Commun. 12, 1137 (1973); 14, 627 (1974).
18. T. Nishino, M. Takeda, and Y. Hamakawa, Solid State Commun. 12, 1137 (1973); 14, 627 (1974).
19. A. T. Collins, S. C. Lawson, G. Davies, and H. Kanda, Phys. Rev. Lett. 65, 891 (1990).
20. P. J. Dean and P. A. Crowther, in Radiative Recombination in Semiconductors, edited by C. Benoit a la Guillaume (Dunod, Paris, 1965), p. 103.
21. H. Holloway, K. C. Hass, M. A. Tamor, T. R. Anthony, and W. F. Banholzer, Phys. Rev. B 44, 7123 (1991).
22. S. Zollner, M. Cardona, and S. Gopalan, Phys. Rev. B 45, 3376 (1992).
23. Computed using Eq. (2) with parameters from Landolt-Börnstein, New Series, Group III: Crystal and Solid State Physics, edited by O. Madelung, M. Schulz, and H. Weiss (Springer-Verlag, Heidelberg, 1982), Vol. 17 a.
24. U. Schmid, N. E. Christensen, and M. Cardona, Solid State Commun. 75, 39 (1990).
25. H.-C. Wille, Yu. V. Shvyd'ko, E. Gerdau, M. Lerche, M. Lucht, H. D. Rüter, and J. Zegenhagen, Phys. Rev. Lett. 89, 285901 (2002).
26. Calculated from Fig. 5 in P. Lautenschlager, P. B. Allen, and M. Cardona, Phys. Rev. B 31, 2163 (1985). We thank M. Cardona for bringing this reference to our attention.
27. G. Davies, E. C. Lightowlers, K. Itoh, W. L. Hansen, E. E. Haller, and V. Ozhogin, Semicond. Sci. Technol. 7, 1271 (1992).
28. D. Karaiskaj, M. L. W. Thewalt, T. Ruf, M. Cardona, and M. Konuma, Solid State Commun. 123, 87 (2002).
29. S. Zwerdling, K. J. Button, B. Lax, and L. M. Roth, Phys. Rev. Lett. 4, 173 (1960).
30. T. K. Lo, Solid State Commun. 15, 1231 (1974).