Reformulated tight binding calculation for band discontinuity at CdTe/HgxCd1-xTe heterointerfaces and their type I-type III transitions

Materials Science and Engineering: B

Volumn 117, Issue 1, 2005, Pages 1-4

  Ekpunobi, A J ^a  

^a NNAMDI AZIKIWE UNIVERSITY   (Nigeria)

Author keywords

Average hybrid energy; CdTe HgxCd1 xTe interface; Valence band discontinuity

Indexed keywords

CADMIUM COMPOUNDS; ENERGY GAP; INFRARED DETECTORS; INTERFACES (MATERIALS); MAGNETOOPTICAL EFFECTS; PROBLEM SOLVING; SEMICONDUCTOR JUNCTIONS; X RAY PHOTOELECTRON SPECTROSCOPY;

AVERAGE HYBRID ENERGY; CDTE-HGXCD1-XTE INTERFACE; ULTRAVIOLET PHOTOELECTRON SPECTROSCOPY (UPS); VALENCE BAND DISCONTINUITY;

SUPERLATTICES;

EID: 12344288454     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2004.09.006     Document Type: Article

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