-
2
-
-
0012064449
-
Positioning single atoms with a scanning tunneling microscope
-
Eigler D M and Schweizer E K 1990 Positioning single atoms with a scanning tunneling microscope Nature 344 524-6
-
(1990)
Nature
, vol.344
, pp. 524-526
-
-
Eigler, D.M.1
Schweizer, E.K.2
-
3
-
-
6144290977
-
Thermomechanical writing with an atomic force microscope tip
-
Mamin H J and Rugar D 1992 Thermomechanical writing with an atomic force microscope tip Appl. Phys. Lett. 61 1003-5
-
(1992)
Appl. Phys. Lett.
, vol.61
, pp. 1003-1005
-
-
Mamin, H.J.1
Rugar, D.2
-
5
-
-
0342908968
-
Modification of hydrogen-passivated silicon by a scanning tunneling microscope operating in air
-
Dagata J A, Schneir J, Harary H H, Evans C J, Postek M T and Bennett J 1990 Modification of hydrogen-passivated silicon by a scanning tunneling microscope operating in air Appl. Phys. Lett. 56 2001-3
-
(1990)
Appl. Phys. Lett.
, vol.56
, pp. 2001-2003
-
-
Dagata, J.A.1
Schneir, J.2
Harary, H.H.3
Evans, C.J.4
Postek, M.T.5
Bennett, J.6
-
6
-
-
0000620542
-
Nanolithography on semiconductor surfaces under etching solutions
-
Nagahara L A, Thundat T and Lindsay S M 1990 Nanolithography on semiconductor surfaces under etching solutions Appl. Phys. Lett. 57 270-2
-
(1990)
Appl. Phys. Lett.
, vol.57
, pp. 270-272
-
-
Nagahara, L.A.1
Thundat, T.2
Lindsay, S.M.3
-
7
-
-
5544319285
-
STM based on the conductivity of surface absorbed water
-
Heim M, Eschrich R, Hillebrand A, Knapp H F, Guckenberger R and Cevc G 1996 STM based on the conductivity of surface absorbed water J. Vac. Sci. Technol. B 14 1498-502
-
(1996)
J. Vac. Sci. Technol. B
, vol.14
, pp. 1498-1502
-
-
Heim, M.1
Eschrich, R.2
Hillebrand, A.3
Knapp, H.F.4
Guckenberger, R.5
Cevc, G.6
-
8
-
-
36448998858
-
One nm depth processing of muscovite mica by mechanical sliding
-
Miyake S 1995 One nm depth processing of muscovite mica by mechanical sliding Appl. Phys. Lett. 67 2925-7
-
(1995)
Appl. Phys. Lett.
, vol.67
, pp. 2925-2927
-
-
Miyake, S.1
-
9
-
-
0012126968
-
Micro and macrotribological improvement of CVD carbon film by the inclusion of silicon
-
Miyake S, Kaneko R and Miyamoto T 1992 Micro and macrotribological improvement of CVD carbon film by the inclusion of silicon Diamond Films Technol. 1 205-11
-
(1992)
Diamond Films Technol.
, vol.1
, pp. 205-211
-
-
Miyake, S.1
Kaneko, R.2
Miyamoto, T.3
-
10
-
-
0026869253
-
Tribological study of cubic boron nitride film
-
Miyake S, Watanabe S, Murakawa M, Kaneko R and Miyamoto T 1992 Tribological study of cubic boron nitride film Thin Solid Films 212 262-6
-
(1992)
Thin Solid Films
, vol.212
, pp. 262-266
-
-
Miyake, S.1
Watanabe, S.2
Murakawa, M.3
Kaneko, R.4
Miyamoto, T.5
-
11
-
-
0000656203
-
Micro scratch hardness increasing of ion plated carbon film by nitrogen inclusion evaluated by atomic force microscope
-
Miyake S, Watanabe S, Miyazawa H, Murakawa M, Kaneko R and Miyamoto T 1994 Micro scratch hardness increasing of ion plated carbon film by nitrogen inclusion evaluated by atomic force microscope Appl. Phys. Lett. 65 3206-8
-
(1994)
Appl. Phys. Lett.
, vol.65
, pp. 3206-3208
-
-
Miyake, S.1
Watanabe, S.2
Miyazawa, H.3
Murakawa, M.4
Kaneko, R.5
Miyamoto, T.6
-
12
-
-
0031145043
-
Nanometer-scale lithography on H-passivated Si(100) with an atomic force microscope in air
-
Lee H T, Oh J S, Park S J, Ha J S, Park K H, Yu H J and Koo J Y 1997 Nanometer-scale lithography on H-passivated Si(100) with an atomic force microscope in air J. Vac. Sci. Technol. A 15 1451-4
-
(1997)
J. Vac. Sci. Technol. A
, vol.15
, pp. 1451-1454
-
-
Lee, H.T.1
Oh, J.S.2
Park, S.J.3
Ha, J.S.4
Park, K.H.5
Yu, H.J.6
Koo, J.Y.7
-
13
-
-
0035891944
-
Fabrication of silicon utilizing mechanochemical local oxidation by diamond tip sliding
-
Miyake S and Kim J 2001 Fabrication of silicon utilizing mechanochemical local oxidation by diamond tip sliding Japan. J. Appl. Phys. B 40 L1247-9
-
(2001)
Japan. J. Appl. Phys. B
, vol.40
-
-
Miyake, S.1
Kim, J.2
-
14
-
-
0036814765
-
Increase and decrease of etching rate of silicon due to diamond tip sliding by changing scanning density
-
Miyake S and Kim J 2002 Increase and decrease of etching rate of silicon due to diamond tip sliding by changing scanning density Japan. J. Appl. Phys. A 41 L1116-9
-
(2002)
Japan. J. Appl. Phys. A
, vol.41
-
-
Miyake, S.1
Kim, J.2
|