Nanometer-scale lithography on H-passivated Si(100) by atomic force microscope in air

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 15, Issue 3, 1997, Pages 1451-1454

  Lee, Hai Tal ^a   Oh, Jae Seuk ^a   Park, Seong Ju ^a   Park, Kang Ho ^b   Ha, Jeong Sook ^b   Yoo, Hyung Joun ^b   Koo, Ja Yong ^c  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^c Korea Research Institute of Standards and Science   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AFM TIP; AMBIENT OXYGEN; ATOMIC FORCE MICROSCOPES; CONTACT MODES; ETCHING TIME; MASK PATTERNS; MECHANICAL FRICTION; NANOMETER-SCALE LITHOGRAPHY; OXIDE LAYER; OXIDE LINES; PASSIVATING LAYER; PATTERN TRANSFERS; SCAN RATES; SELECTIVE WET ETCHING; SI (100) SUBSTRATE; SI NANOSTRUCTURES; SI SURFACES; SI(1 0 0); TIP FORCES;

FRICTION; MASKS; OXYGEN; PASSIVATION; SILICON NITRIDE; WET ETCHING; AIR; CHEMICAL MODIFICATION; ETCHING; NANOSTRUCTURED MATERIALS; NANOTECHNOLOGY; SEMICONDUCTING SILICON; SUBSTRATES;

SILICON; ATOMIC FORCE MICROSCOPY;

OXIDE MASK PATTERNS; SELECTIVE WET ETCHING;

EID: 0031145043     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.580560     Document Type: Article

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