Charge transport through a single-electron transistor with a mechanically oscillating island

Physical Review B - Condensed Matter and Materials Physics

Volumn 70, Issue 19, 2004, Pages 1-4

  Chtchelkatchev, N M ^a,b,c   Belzig, W ^a   Bruder, C ^a  

^a UNIVERSITY OF BASEL   (Switzerland)

^b LANDAU INSTITUTE FOR THEORETICAL PHYSICS   (Russian Federation)

^c INSTITUTE FOR HIGH PRESSURE PHYSICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ARTICLE; ELECTRIC CAPACITANCE; ELECTRON; NOISE; OSCILLATOR; OSCILLATORY POTENTIAL; SEMICONDUCTOR;

EID: 12344258649     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.70.193305     Document Type: Article

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27. g.
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