Development of ultra-low impedance Through-wafer Micro-vias

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 520, Issue 1-3, 2004, Pages 463-465

  Finkbeiner, F M ^a   Adams, C ^a   Apodaca, E ^a   Chervenak, J A ^a   Fischer, J ^b   Doan, N ^a   Li, M J ^a   Stahle, C K ^a   Brekosky, R P ^a,c   Bandler, S R ^a,d   Figueroa Feliciano, E ^a   Lindeman, M A ^a,d   Kelley, R L ^a   Saab, T ^a   Talley, D J ^a  

^a NASA GODDARD SPACE FLIGHT CENTER   (United States)

^b AlumiPlate Inc   (United States)

^c NORTHROP GRUMMAN CORPORATION   (United States)

^d Bldg 142   (United States)

Author keywords

Cryogenic temperatures; High aspect ratio etching; PPR electro deposition; Through Wafer Micro Via

Indexed keywords

ASPECT RATIO; ELECTRIC IMPEDANCE; ELECTRIC RESISTANCE; ELECTROPLATING; ETCHING; INTERCONNECTION NETWORKS; QUANTUM INTERFERENCE PHENOMENA; SILICON WAFERS; SQUIDS; SUPERCONDUCTIVITY;

HIGH-ASPECT RATIO ETCHING; PPR ELECTRO-DEPOSITION; THROUGH-WAFER MICRO-VIA (TWMV);

WSI CIRCUITS;

EID: 12144289079     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2003.11.373     Document Type: Conference Paper

References (3)

1. Ployakov A., et al. Microelectr. Reliab. 42:2002;1783.
2. J.H. Wu, et al., IEDM Tech. Dig. (2000) 477.
3. West A.C., et al. J. Electrochem. Soc. 145:1998;3070.