Conventional and microwave-modulated Shubnikov-de Haas oscillations in GaN electron systems

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 21, Issue 2-4, 2004, Pages 631-635

  Juang, J R ^a   Hang, D R ^a,b   Huang, Tsai Yu ^a   Hung, W K ^c   Chen, Y F ^a   Kim, Gil Ho ^d   Lin, Ming Gu ^a   Chen, Tse Ming ^a   Liang, C T ^a   Lee, Y ^d   Lee, Jae Hoon ^e   Lee, Jung Hee ^e  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^c NATIONAL TAIPEI UNIVERSITY OF TECHNOLOGY   (Taiwan)

^d Sungkyunkwan University   (South Korea)

^e Kyungpook National University   (South Korea)

Author keywords

GaN; Microwave; Shubnikov de Haas

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC POTENTIAL; ENERGY GAP; GATES (TRANSISTOR); HIGH ENERGY LASERS; INTERFACES (MATERIALS); MAGNETORESISTANCE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MICROWAVES; SURFACE ROUGHNESS;

GAN; GATE VOLTAGE; MICROWAVE MODULATION; SHUBNIKOV-DE HAAS OSCILLATIONS;

GALLIUM NITRIDE;

EID: 12144286613     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2003.11.093     Document Type: Conference Paper

References (11)

1. Schacham S.E., Haugland E.J., Alterovitz S.A. Appl. Phys. Lett. 61:1992;551.
2. Linke H., Kowalski B., Ramvall P., Emanuelsson P., Omling P., Oettinger K., Drechsler M., Meyer B.K. Appl. Phys. Lett. 62:1993;2725.
3. Isihara A., Smrcka L. J. Phys. C.: Solid State Phys. 19:1986;6777.
4. Coleridge P.T., Stoner R., Fletcher R. Phys. Rev. B. 39:1988;1120.
5. H.Y. Fan, in: R.K. Willardson, A.C. Beer (Eds.), Semiconductors and Semimetals, Vol. 3, Academic Press, New York, 1967, p. 405.
6. Fan J.C., Chang Y.H., Chen Y.F., Whang J.F., Fang F.F., Tsai W.J., Chang C.Y. China J. Phys. 35:1997;917.
7. Manfra M.J., Pfeiffer L.N., West K.W., Stormer H.L., Baldwin K.W., Hsu J.W.P., Lang D.V., Molner R.J. Appl. Phys. Lett. 77:2000;2888.
8. Nag B.R., Mukhopadhyay S., Das M. J. Appl. Phys. 86:1999;459.
9. Walukiewicz W., Ruda H.E., Lagowski J., Gatos H.C. Phys. Rev. B. 29:1984;4818.
10. Hsu L., Walukiewicz W. Phys. Rev. B. 56:1997;1520.
11. Ando T. J. Phys. Soc. Japan. 51:1982;3900.