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Volumn 20, Issue 1, 2005, Pages 16-22

Simple analytical valence band structure including warping and non-parabolicity to investigate hole transport in Si and Ge

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; COMPUTER SIMULATION; ELECTRIC FIELD EFFECTS; FUNCTIONS; ITERATIVE METHODS; MONTE CARLO METHODS; SEMICONDUCTING GERMANIUM;

EID: 11844256345     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/20/1/003     Document Type: Article
Times cited : (29)

References (17)
  • 16
    • 0004254425 scopus 로고
    • subvol A, ed O Madelung, M Schultz and H Weiss (Berlin: Springer)
    • Landoldt-Börnstein 1982 Numerical Data and Functional Relationships in Science and Technology (New Series) (Group III: Crystal and Solid Physics vol 17) ed K H Hellwege (Berlin: Springer) Landoldt-Börnstein 1982 Semiconductors subvol A, ed O Madelung, M Schultz and H Weiss (Berlin: Springer) Landoldt-Börnstein 1982 Physics of Group IV Elements and III-V Compounds ed O Madelung (Berlin: Springer)
    • (1982) Semiconductors
    • Landoldt-Börnstein1
  • 17
    • 0003554309 scopus 로고
    • ed O Madelung (Berlin: Springer)
    • Landoldt-Börnstein 1982 Numerical Data and Functional Relationships in Science and Technology (New Series) (Group III: Crystal and Solid Physics vol 17) ed K H Hellwege (Berlin: Springer) Landoldt-Börnstein 1982 Semiconductors subvol A, ed O Madelung, M Schultz and H Weiss (Berlin: Springer) Landoldt-Börnstein 1982 Physics of Group IV Elements and III-V Compounds ed O Madelung (Berlin: Springer)
    • (1982) Physics of Group IV Elements and III-V Compounds
    • Landoldt-Börnstein1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.