Influence of activated nitrogen on plasma assisted MBE growth of GaN

Materials Science Forum

Volumn 264-268, Issue PART 2, 1998, Pages 1193-1196

  Birkle, U ^a   Thomas, C ^a   Fehrer, M ^a   Einfeldt, S ^a   Heinke, H ^a   Hommel, D ^a  

^a UNIVERSITY OF BREMEN   (Germany)

Author keywords

Defects; ECR; GaN; Langmuir; MBE; Morphology; Nitrogen Species; Photoluminescence; Plasma; RF

Indexed keywords

COMPOSITION EFFECTS; ELECTRON TRANSPORT PROPERTIES; IONS; MOLECULAR BEAM EPITAXY; MORPHOLOGY; NITROGEN; PHOTOLUMINESCENCE; PLASMA SOURCES; SUBSTRATES; SURFACE STRUCTURE;

ELECTRON MOBILITY; GALLIUM NITRIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 11644317819     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.264-268.1193     Document Type: Article

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