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Journal of Applied Physics

Volumn 50, Issue 9, 1979, Pages 5847-5854

ESR centers, interface states, and oxide fixed charge in thermally oxidized silicon wafers

(4) Caplan, Philip J a Poindexter, Edward H a Deal, Bruce E b Razouk, Reda R b

a U S ARMY RESEARCH LABORATORY (United States)

b FAIRCHILD SEMICONDUCTOR (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES;

SEMICONDUCTING SILICON;

EID: 0018518071 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.326732 Document Type: Article

Times cited : (410)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.