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Journal of Magnetism and Magnetic Materials

Volumn 286, Issue SPEC. ISS., 2005, Pages 99-102

Study on the transport properties of MnGe(As 1-xP x) 2 grown on GaAs(1 0 0)

(6) Cui, Y a Song, J a Lee, J a Kim, Y a Ketterson, J B a Cho, S b

a NORTHWESTERN UNIVERSITY (United States)

b University of Ulsan (South Korea)

Author keywords

GaAs(100); Hall measurement; Magnetoresistance; MnGe(As 1 xP x) 2; Molecular beam epitaxy; Transport property

Indexed keywords

GAAS(100); HALL MEASUREMENT; MNGE(AS1-XPX)2; PARAMAGNETIC TRANSITIONS;

ELECTRIC RESISTANCE; GALLIUM COMPOUNDS; MAGNETIC SEMICONDUCTORS; MAGNETORESISTANCE; MOLECULAR BEAM EPITAXY; THERMAL EFFECTS; THIN FILMS; TRANSPORT PROPERTIES; X RAY PHOTOELECTRON SPECTROSCOPY;

MANGANESE COMPOUNDS;

EID: 11444256921 PISSN: 03048853 EISSN: None Source Type: Journal
DOI: 10.1016/j.jmmm.2004.09.046 Document Type: Conference Paper

Times cited : (1)

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