On the mechanism of ion-implanted As diffusion in relaxed SiGe

Applied Surface Science

Volumn 224, Issue 1-4, 2004, Pages 59-62

  Eguchi, S ^a   Lee, J J ^b   Rhee, S J ^b   Kwong, D L ^b   Lee, M L ^c   Fitzgerald, E A ^c   Aberg I ^c   Hoyt, J L ^c  

^a HITACHI LTD   (Japan)

^b The University of Texas at Austin   (United States)

^c Massachusetts Institute of Technology Cambridge   (United States)

Author keywords

Arsenic; Diffusion; Silicon Germanium

Indexed keywords

AMMONIA; ARSENIC; COMPUTER SIMULATION; DIFFUSION; DOPING (ADDITIVES); ION IMPLANTATION; MOSFET DEVICES; RAPID THERMAL ANNEALING; SECONDARY ION MASS SPECTROMETRY;

RAPID THERMAL NITRIDATION (RTN); TRANSIENT ENHANCED DIFFUSION (TED); VACANCY DEFECTS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 1142280325     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2003.08.029     Document Type: Conference Paper

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