Atomic-layer doping in Si by alternately supplied PH3 and SiH4

Thin Solid Films

Volumn 380, Issue 1-2, 2000, Pages 134-136

  Shimamune, Y ^a   Sakuraba, M ^a   Matsuura, T ^a   Murota, J ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; ANNEALING; CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; MULTILAYERS; PRECIPITATION (CHEMICAL); SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING;

ATOMIC-LAYER DOPING; LOW-PRESSURE CHEMICAL VAPOR DEPOSITION;

SEMICONDUCTING FILMS;

EID: 0034499871     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)01487-5     Document Type: Article

References (6)

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