60 nm gate-length Si/SiGe HEMT

Applied Surface Science

Volumn 224, Issue 1-4, 2004, Pages 382-385

  Kasamatsu, A ^a   Kasai, K ^b   Hikosaka, K ^b   Matsui, T ^a   Mimura, T ^b  

^a NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY   (Japan)

^b FUJITSU LABORATORIES LTD   (Japan)

Author keywords

HEMT; High electron mobility transistor; Si; SiGe; Silicon

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; ELECTRON BEAM LITHOGRAPHY; GATES (TRANSISTOR); HALL EFFECT; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; TRANSCONDUCTANCE; TRANSMISSION ELECTRON MICROSCOPY;

SCHOTTKY-METAL GATES; SIGE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 1142268135     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2003.08.064     Document Type: Conference Paper

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