Molecular-dynamics simulation of Si1-xGex epitaxial growth on Si(1 0 0)

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 217, Issue 1, 2004, Pages 33-38

  Xu, J L ^a   Feng, J Y ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

ICB; Molecular dynamic simulation; Si1 xGex; Stillinger Weber potential; Stranski Krastanov growth

Indexed keywords

BAND STRUCTURE; BOUNDARY CONDITIONS; CHEMICAL VAPOR DEPOSITION; COMPUTER SIMULATION; ELECTRONIC EQUIPMENT; EPITAXIAL GROWTH; HETEROJUNCTION BIPOLAR TRANSISTORS; KINETIC ENERGY; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; MOLECULAR DYNAMICS; MOSFET DEVICES; STRAIN;

MOLECULAR DYNAMIC SIMULATIONS; SI1-XGEX; STILLINGER-WEBER POTENTIAL; STRANSKI-KRASTANOV GROWTH;

SILICON ALLOYS;

EID: 1142268054     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2003.09.041     Document Type: Article

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