Electrical properties and local structure of n-type conducting amorphous indium sulphide

Philosophical Magazine Letters

Volumn 84, Issue 10, 2004, Pages 665-671

  Narushima, Satoru ^a   Hirokl, Masanori ^a   Ueda, Kazushige ^b,d   Shimizu, Ken Ichi ^c   Kamiya, Toshio ^a,b   Hirano, Masahiro ^b   Hosono, Hideo ^a,b  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c KEIO UNIVERSITY   (Japan)

^d KYUSHU INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC CONDUCTIVITY; HALL EFFECT; IMPURITIES; INDIUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

BAND GAPS; CHALCOGENIDES; INTERMOLECULAR FORCES;

ELECTRONIC STRUCTURE;

EID: 11344291884     PISSN: 09500839     EISSN: None     Source Type: Journal    
DOI: 10.1080/09500830512331329114     Document Type: Article

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