Ambient gas dependence of hydrogenated silicon clusters grown in an ion trap

Journal of Physics D: Applied Physics

Volumn 31, Issue 18, 1998, Pages

  Watanabe, M O ^a   Kawashima, N ^b   Kanayama, T ^b,c  

^a JT RES CENTER FOR ATOM TECHNOLOGY   (Japan)

^b NATL INST FOR ADV INTERDISC RES   (Japan)

^c ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; ELECTRON BEAMS; IONIZATION OF SOLIDS; MASS SPECTROMETRY; RADIATION EFFECTS; SILANES;

AMBIENT GAS DEPENDENCE; ION TRAP;

SILICON;

EID: 11344279026     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/31/18/002     Document Type: Article

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