Growth and transport of structure-controlled hydrogenated Si clusters for deposition on solid surfaces

Applied Physics A: Materials Science and Processing

Volumn 66, Issue SUPPL. 1, 1998, Pages

  Watanabe, M O ^a   Kanayama, T ^b,c  

^a JT RES CENTER FOR ATOM TECHNOLOGY   (Japan)

^b NATL INST FOR ADV INTERDISC RES   (Japan)

^c ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BULK-LIKE; CLUSTER DEPOSITION; CLUSTER GROWTH; CLUSTER ION BEAMS; CLUSTER IONS; DEPOSITION ENERGY; EFFUSIVE FLOW; GROWTH PARAMETERS; ION TRAPS; QUADRUPOLE LENS; QUADRUPOLES; RING STRUCTURES; SAMPLE SURFACE; SI CLUSTERS; SOLID SURFACE; VACUUM SYSTEM;

HYDROGENATION; ION BEAMS; MASS SPECTROMETRY; SILICON;

IONS;

EID: 4243259591     PISSN: 09478396     EISSN: 14320630     Source Type: Journal    
DOI: 10.1007/s003390051292     Document Type: Article

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