Ultrafast high-field transport in GaAs: Direct observation of quasi-ballistic electron motion, impact ionization and avalanche multiplication

Semiconductor Science and Technology

Volumn 19, Issue 4 SPEC. ISS., 2004, Pages

  Betz, M ^a   Trumm, S ^a   Sotier, F ^a   Leitenstorfer, A ^a   Schwanhausser A ^b   Eckardt, M ^b   Schmidt, O ^b   Malzer, S ^b   Dohler G H ^b   Hanson, M ^c   Driscoll, D ^c   Gossard, A C ^c  

^a TECHNICAL UNIVERSITY OF MUNICH   (Germany)

^b UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^c University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; CARRIER CONCENTRATION; ELECTRIC EXCITATION; ELECTRIC FIELDS; ELECTRON SCATTERING; ELECTRON TRANSITIONS; ELECTRONIC EQUIPMENT; HETEROJUNCTIONS; IMPACT IONIZATION;

AVALANCHE MULTIPLICATION; ELECTRON DYNAMICS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 11144355683     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/19/4/058     Document Type: Conference Paper

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