Intraband population inversion and amplification of IR radiation through charge-carrier injection into quantum wells and quantum dots

JETP Letters

Volumn 68, Issue 5, 1998, Pages 417-425

  Vorob'ev, L E ^a  

^a PETER THE GREAT ST PETERSBURG POLYTECHNIC UNIVERSITY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001636187     PISSN: 00213640     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.567883     Document Type: Article

References (15)

1. R. F. Kazarinov and R. A. Suris, Fiz. Tekh. Poluprovodn. 5, 797 (1971);
2. 6, 148 (1972) [Sov. Phys. Semicond. 5, 707 (1971);
3. 6, 120 (1972)].
4. J. Faist, F. Capasso, D. L. Sivco et al., Science 264, 553 (1994).
5. O. Gauthier-Lafaye, S. Savage, P. Boucaud et al., Appl. Phys. Lett. 70, 1 (1997).
6. H. Sakaki, T. Noda, K. Hirakawa et al., Appl. Phys. Lett. 51, 1 (1997).
7. W. Tsang (ed.), Semiconductor Injection Lasers, Academic Press, New York, 1985, Chap. 2
8. Russian translation, Radio i Svyaz', Moscow, 1990.
9. T. Ando, A. Fowler, and F. Stern, Rev. Mod. Phys. 54 (2), 437-672 (1982).
10. M. Grundmann, O. Stier, and D. Bimberg, Phys. Rev. B 52, 11969 (1995).
11. N. N. Ledentsov, in The Physics of Semiconductors, edited by M. Sheffler and R. Zimmerman, World Scientific, Singapore, 1997, Vol. 1, p. 19.
12. B. T. Miller, W. Hansen, S. Manus et al., Phys. Rev. B 56, 6764 (1997).
13. S. Sauvage, P. Boucaud, F. H. Julien et al., Appl. Phys. Lett. 71, 2785 (1997).
14. G. G. Zegrya and A. S. Polkovnikov, Zh. Éksp. Teor. Fiz. 113, 1491 (1998) [JETP 86, 815 (1998)].
15. L. E. Vorob'ev, D. A. Firsov, V. A. Shalygin et al., JETP Lett. 67, 275 (1998).