Heteroepitaxial growth and ferroelectricity of Bi3.25La 0.75Ti3O12 films on n-GaN/Al2O 3(0001) substrates prepared by pulsed-laser deposition

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 11 A, 2004, Pages 7625-7626

  Cho, Chae Ryong ^a   Hwang, Jae Yeol ^a   Kim, Jong Pil ^a   Jeong, Se Young ^b   Park, Bae Ho ^c  

^a Korea Basic Science Institute (KBSI)   (South Korea)

^b Pusan National University   (South Korea)

^c Konkuk University   (South Korea)

Author keywords

BLT film; GaN; Heteroepitaxial; Pulsed laser deposition; X ray photoelectron spectroscopy

Indexed keywords

CHEMICAL BONDS; COERCIVE FORCE; CRYSTALLINE MATERIALS; EPITAXIAL GROWTH; ETCHING; FERROELECTRIC MATERIALS; GALLIUM NITRIDE; GOLD; METALLIC FILMS; MOLECULAR STRUCTURE; POLARIZATION; PULSED LASER DEPOSITION; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

BLT FILMS; HETEROEPITAXIAL GROWTH; METAL-FERROELECTRIC-SEMICONDUCTOR (MFS) STRUCTURE; MULTI-ORIENTATIONAL STATES;

BISMUTH COMPOUNDS;

EID: 11144222883     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.7625     Document Type: Article

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