Deoxidization of water desorbed from APCVD TEOS-O3 SiO 2 film with thin titanium cap film

Journal of the Electrochemical Society

Volumn 151, Issue 11, 2004, Pages

  Yoshimaru, Masaki ^a   Yoshie, Toru ^a   Kageyama, Makiko ^a   Onoda, Hiroshi ^a  

^a OKI ELECTRIC INDUSTRY CO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATMOSPHERIC PRESSURE; CHEMICAL VAPOR DEPOSITION; DESORPTION; DIELECTRIC FILMS; MOSFET DEVICES; SILICON COMPOUNDS; THIN FILMS; TITANIUM; X RAY PHOTOELECTRON SPECTROSCOPY;

ATMOSPHERIC PRESSURE CHEMICAL VAPOR DEPOSITION (APCVD); DEOXIDIZATION; SILICON OXIDATION; WATER DESORPTION;

WATER;

EID: 10944225232     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1795571     Document Type: Article

References (20)

1. Y. Nishimoto, N. Tokumasu, T. Fukuyama, and K. Maeda, p. 447, Extended Abstracts of the 19th Conference on Solid-State Devices and Materials (1987).
2. Y. Ikeda, Y. Numasawa, and M. Sakamoto, Denki Kagaku oyobi Kogyo Butsuri Kagaku, 56, 527 (1988).
3. H. Kotani, M. Matsuura, A. Fujii, H. Genjou, and S. Nagao, Tech. Dig. Int. Electron Devices Meet. 1989, 669.
4. K. Fujino, Y. Nishimoto, N. Tokumasu, and K. Maeda, J. Electrochem. Soc., 138, 550 (1991).
5. M. Yoshimaru and T. Yoshie, J. Electrochem. Soc., 145, 2847 (1998).
6. K. Simokawa, T. Usami, S. Tokitou, N. Hirasita, M. Yoshimaru, and M. Ino. in VLSI Technology, IEEE, p. 96 (1992).
7. K. Simokawa, T. Usami, S. Tokitou, and M. Yoshimaru. IEICE Trans., E77-C, 473 (1994).
8. T. Katou, H. Ashida, Y. Hosoda, and Y. Ishimaru, in Semiconductors and Integrated Circuits Technology, IEEE, p. 37 (1992).
9. M. Yoshimaru, S. Koizumi, and K. Shimokawa, J. Vac. Sci. Technol. A. 15, 2915 (1997).
10. S. Nozaki, H. Ono, K. Uchida, H. Morisaki, and M. Yoshimaru, in Interconnect Technology p. 69 (2002).
11. M. Yoshimaru, T. Yoshic, M. Kageyama, K. Shimokawa, Y. Fukuda, H. Onoda. and M. Ino, in Reliability Physics. IEEE, p. 359 (1995).
12. J. A. Theil, D. V. Tsu, and G. Lucovsky, J. Electron. Mater., 209 (1990).
13. W. A. Pliskin and H. S. Lehman, J. Electrochem. Soc., 112, 1013 (1965).
14. W. A. Pliskin, J. Vac. Sci. Technol., 14, 1064 (1977).
15. G. Lucovsky, M. J. Manitini, J. K. Srivastave, and E. A. Irene, J. Vac. Sci. Technol. B, 5, 530 (1987).
16. S. Kondou, K. Tomoi, and C. Pak, Bull. Chem. Soc. Jpn., 52, 2046 (1979).
17. I. Tsuchiya, J. Phys. Chem., 86, 4107 (1982).
18. M. Kitagawa, H. Nishikawa, and Y. Ohki, J. Appl. Phys., 74, 2378 (1993).
19. M. Yoshimaru, S. Koizumi, and K. Shimokawa, J Vac. Sci. Technol. A, 15, 2908 (1997).
20. N. Hirasita, S. Tokitoh, and H. Uchida, Jpn. J. Appl. Phys., Part 1, 32, 1787 (1993).