Interaction between water and fluorine-doped silicon oxide films deposited by plasma-enhanced chemical vapor deposition

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 15, Issue 6, 1997, Pages 2915-2922

  Yoshimaru, M ^a   Koizumi, S ^a   Shimokawa, K ^a  

^a OKI ELECTRIC INDUSTRY CO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRIC VARIABLES MEASUREMENT; FLUORINE; FOURIER TRANSFORM INFRARED SPECTROSCOPY; PERMITTIVITY; SATURATION (MATERIALS COMPOSITION); SEMICONDUCTING FILMS; SEMICONDUCTING SILICON COMPOUNDS; SILICON NITRIDE; WATER; WATER ABSORPTION;

FLUORINE DOPED SILICON OXIDE FILM; HUMIDIFICATION; PLASMA ENHANCE CHEMICAL VAPOR DEPOSITION; RESIDUAL BAND; THERMAL DESORPTION SPECTROSCOPY;

CHEMICAL REACTIONS;

EID: 0031268556     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.580885     Document Type: Article

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