Room-temperature, mid-infrared (λ=4.7 μm) electroluminescence from single-stage intersubband GaAs-based edge emitters

Applied Physics Letters

Volumn 85, Issue 20, 2004, Pages 4573-4575

  Xu, D P ^a   Mirabedini, A ^a   D'Souza, M ^a   Li, S ^a   Botez, D ^a   Lyakh, A ^b   Shen, Y J ^b   Zory, P ^b   Gmachl, C ^c  

^a UNIVERSITY OF WISCONSIN MADISON   (United States)

^b UNIVERSITY OF FLORIDA   (United States)

^c Princeton University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EDGE EMITTERS; ENERGY BARRIERS; QUANTUM-CASCADE LASERS; RADIATIVE TRANSITION;

ELECTROLUMINESCENCE; ELECTRON ENERGY LEVELS; ELECTRON TUNNELING; INFRARED RADIATION; LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; QUANTUM WELL LASERS; TEMPERATURE DISTRIBUTION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 10944222239     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1819518     Document Type: Article

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