Influence of N on the electron transport in (Ga, In)(N, As) probed by magnetotransport under hydrostatic pressure

IEE Proceedings: Optoelectronics

Volumn 151, Issue 5, 2004, Pages 357-360

  Teubert, J ^a   Klar, P J ^a   Heimbrodt, W ^a   Volz, K ^a   Stolz, W ^a  

^a PHILIPPS UNIVERSITY MARBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRON MOBILITY; ELECTRON TRANSPORT PROPERTIES; ELECTRONIC PROPERTIES; HYDROSTATIC PRESSURE; MAGNETORESISTANCE; NITROGEN; OPTICAL PROPERTIES;

HALL MEASUREMENTS; MAGNETOTRANSPORT MEASUREMENT;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 10844257504     PISSN: 13502433     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1049/ip-opt:20040892     Document Type: Article

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