Further insight into the growth temperature influence of 1.3 μm GaInNAs/GaAs QWs on their properties

IEE Proceedings: Optoelectronics

Volumn 151, Issue 5, 2004, Pages 279-283

  Jahan, D ^a   Patriarche, G ^a   Sallet, V ^a   Harmand, J C ^a  

^a UNIV PARIS SUD   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

ANNEALING TEMPERATURE; GROWTH TEMPERATURE;

QUANTUM WELL LASERS;

EID: 10844245638     PISSN: 13502433     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1049/ip-opt:20040888     Document Type: Article

References (9)

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