Electromigration of Al-0.5 wt%Cu with Nb-based liner dual damascene interconnects

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 10, 2004, Pages 6957-6962

  Usui, Takamasa ^a   Watanabe, Tadayoshi ^a   Hatano, Masaaki ^a   Ito, Sachiyo ^a   Wada, Junichi ^a   Kaneko, Hisashi ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Dual damascene; Electromigration; Failure mode; Long throw sputtering; Multi level interconnects; Nb liner; Reliability; Self ionized sputtering

Indexed keywords

ALUMINUM; CATHODES; IONIZATION; LSI CIRCUITS; NIOBIUM; REACTIVE ION ETCHING; RELIABILITY; SPUTTERING;

DUAL DAMASCENE; FAILURE MODE; LONG-THROW SPUTTERING; MULTI LEVEL INTERCONNECTS; NB LINER; SELF-IONIZED SPUTTERING;

ELECTROMIGRATION;

EID: 10844239606     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.6957     Document Type: Article

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