Electronic structure and interfacial properties of ZnSe/Si, ZnSe/Ge, and ZnSe/SiGe superlattices

Superlattices and Microstructures

Volumn 37, Issue 2, 2005, Pages 127-137

  Laref, A ^a,b   Belgoumene, B ^a   Aourag, H ^a   Maachou, M ^a   Tadjer, A ^a  

^a UNIVERSITY OF SIDI BEL ABBES   (Algeria)

^b NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC STRUCTURE; GERMANIUM; QUANTUM THEORY; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR MATERIALS;

ENERGY GAPS; INTERFACIAL PROPERTIES; QUANTUM CONFINEMENT EFFECT;

SEMICONDUCTOR SUPERLATTICES;

EID: 10844221579     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.spmi.2004.09.057     Document Type: Article

References (24)

1. M. Akiyama, Y. Kawarada, K. Kaminishi, J. Cryst. Growth 68 (1984) 21.
2. N. Chang, R. People, F.A. Baiochi, K.W. Wecht, Appl. Phys. Lett. 49 (1986) 815.
3. T. Crumbaker, H.Y. Lee, M.J. Hafich, G. Y. Robinson, Appl. Phys. Lett. 54 (1986) 815.
4. O. Ieda, K. Kitahara, N. Ohtsuka, A. Hobbs, M. Ozeki, in: R.F.C. Frrow, J.P. Harrison, P.S. Peercy, A. Zangwill (Eds.), Heteroepitaxy of Dissimilar Materials, MRS Synposia Proceedings, vol. 221, Materials Research Society, Pittsburgh, 1991, p. 393.
5. B.J. Wu, L.H. Kuo, J.M. Depuydt, G.M. Haugen, M.A. Haase, L. Salamancariba, Appl. Phys. Lett. 68 (1996) 379.
6. J.R. Kim, K.S Jones, Crit. Rev. Solid State Mater. Sci. 21 (1996) 1.
7. P. Rees, J.F. Helfeman, F.P. Logue, J.F. Donegan, C. Jordan, J. Hegarty, F. Hiei, A. Ishibashi, IEE Proc. Optoelectron. 143 (1996) 110.
8. T.K. Tran, A. Parikh, T. Kelz, J.W. Tomm, W. Hoerstel, P. Schafer, B.K. Wagner, S.D. Pearson, R. Bicknelltassius, C.J. Summers, J. Cryst. Growth 159 (1996) 1080.
9. R.C. Miller, D.A. Kleinman, A. Savage, Phys. Rev. Lett. 11 (1963) 146.
10. F.W. Scholl, C.L. Tang, Phys. Rev. B 8 (1973) 4607.
11. A.J. Fisher, D.S. Kim, J. Hays, W. Sham, J.J. Song, D.B. Eason, J. Ren, J.F. Schetzina, H. Luo, J.K. Furdyna, Z.Q. Zhu, T. Yao, J.F. Klem, W. Shafer, Phys. Rev. Lett. 73 (1994) 2378.
12. M. Ritze, R. Enderlein, D. Schikora, O. Goede, W. Heimbrodlt, Superlatt. Microstruct. 9 (1986) 351.
13. H. Rücker, M. Hanke, F. Bechstedt, R. Enderlein, Superlatt. Microstruct. 2 (1986) 477.
14. E. Wang, Appl. Surf. Sci. 201 (1996) 626.
15. Z.Y. Han, S.F. Yoon, K. Radhakrishnan, D.H. Zhang, Superlatt. Microstruct. 18 (1995) 83.
16. U. Schmid, N.E. Christensen, M. Alouani, M. Cardona, Phys. Rev. B 43 (1991) 14597.
17. D. Shen, K. Zhang, R. Fu, Appl. Phys. Lett. 53 (1988) 500.
18. P. Vogl, H.P. Hjalmarson, J.D. Dow, J. Phys. Chem. Solids 44 (1983) 365.
19. G.L. Zhao, D. Bagayoko, T.D. Williams, Phys. Rev. B 60 (1999) 1563.
20. M. Rohlfing, P. Kruger, J. Pollmann, Phys. Rev. B 57 (1998) 6485.
21. M. Oshikiri, F. Aryasetiawan, Phys. Rev. B 60 (1999) 10754.
22. A. Laref, H. Aourag, B. Belgoumene, A. Tadjer, J. Appl. Phys. 94 (2003) 5027.
23. W. Harrison, Electronic Structure and the Properties of Solids, Dover, New York, 1989.
24. A.G. Milnes, D.L. Feucht, Heterojunctions and Metal-Semiconductor Junctions, Academic, New York, 1972.