InAs/InAsP composite channels for antimonide-based field-effect transistors

Applied Physics Letters

Volumn 84, Issue 3, 2004, Pages 437-439

  Lin, H K ^a   Kadow, C ^a   Dahlstrom M ^a   Bae, J U ^a   Rodwell, M J W ^a   Gossard, A C ^a   Brar, B ^b   Sullivan, G ^b   Nagy, G ^b   Bergman, J ^b  

^a University of California   (United States)

^b ROCKWELL SCIENTIFIC COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT GAIN; HALL MOBILITY; SECONDARY ION FLUXES;

CARRIER CONCENTRATION; ELECTRIC BREAKDOWN; ELECTRIC CONDUCTIVITY; ELECTRON BEAMS; ELECTRON MOBILITY; ELECTRON TRANSPORT PROPERTIES; FIELD EFFECT TRANSISTORS; HALL EFFECT; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING ANTIMONY COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH;

SEMICONDUCTOR QUANTUM WELLS;

EID: 10744232234     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1642275     Document Type: Article

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