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GaInSb/AlaAsSb strained quantum well semiconductor lasers for 1.55 μm operation
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Electroluminescence and lasing in type II Ga(Al)Sb/InGaAsSb heterostructures in the spectral range 3-5 μm
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2.3-2.7-μm room temperature CW operation of In-GaAsSb-AlGaAsSb broad waveguide SCH-QW diode lasers
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Low threshold high-quantum-efficiency laterally gain coupled InGaAs/AlGaAs distributed feedback lasers
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0040113699
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1.55 μm single mode lasers with complex coupled distributed feedback gratings fabricated by focused ion beam implantation
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H. König, S. Rennon, J. P. Reithmaier, A. Forchel, J. L. Gentner, and L. Goldstein, "1.55 μm single mode lasers with complex coupled distributed feedback gratings fabricated by focused ion beam implantation, " Appl. Phys. Lett., vol. 75, no. 11, pp. 1491-1493, 1999.
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