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Volumn 44, Issue 1, 2004, Pages 144-147

Low-Noise Characteristics of a 0.15 μm GaAs Power Metamorphic HEMT with a Double-Doped In 0.52Al 0.48As/In 0.53Ga 0.47As Structure

Author keywords

0.15 m; GaAs; Low noise; MHEMT

Indexed keywords

EID: 10744225843 PISSN: 03744884 EISSN: None Source Type: Journal
DOI: None Document Type: Conference Paper

Times cited : (4)

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